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hexfet ? power mosfet parameter typ. max. units r jc junction-to-case ??? 0.75 r ja junction-to-ambient (pcb mount)** ??? 40 thermal resistance www.irf.com 1 v dss = 60v r ds(on) = 12m ? i d = 84a s d g advanced hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the d 2 pak is a surface mount power package capable of accommodating die sizes up to hex-4. it provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. the d 2 pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0w in a typical surface mount application. the through-hole version (irf1010el) is available for low- profile applications. description absolute maximum ratings parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 84 i d @ t c = 100c continuous drain current, v gs @ 10v 59 a i dm pulsed drain current 330 p d @t c = 25c power dissipation 200 w linear derating factor 1.4 w/c v gs gate-to-source voltage 20 v i ar avalanche current 50 a e ar repetitive avalanche energy 17 mj dv/dt peak diode recovery dv/dt 4.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torque, 6-32 or m3 srew 10 lbfin (1.1nm) IRF1010ESPBF irf1010elpbf d 2 pak irf1010es to-262 irf1010el advanced process technology surface mount (irf1010es) low-profile through-hole (irf1010el) 175c operating temperature fast switching fully avalanche rated lead-free c/w pd - 95444

2 www.irf.com s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 50a, v gs = 0v t rr reverse recovery time ??? 73 110 ns t j = 25c, i f = 50a q rr reverse recovery charge ??? 220 330 nc di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 84 330 this is a typical value at device destruction and represents operation outside rated limits. this is a calculated value limited to t j = 175c . calculated continuous current based on maximum allowable junction temperature. package limitation current is 75a. **when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994 parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 60 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.064 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 12 m ? v gs = 10v, i d = 50a v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 69 ??? ??? s v ds = 25v, i d = 50a ??? ??? 25 a v ds = 60v, v gs = 0v ??? ??? 250 v ds = 48v, v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 100 v gs = 20v gate-to-source reverse leakage ??? ??? -100 na v gs = -20v q g total gate charge ??? ??? 130 i d = 50a q gs gate-to-source charge ??? ??? 28 nc v ds = 48v q gd gate-to-drain ("miller") charge ??? ??? 44 v gs = 10v, see fig. 6 and 13 t d(on) turn-on delay time ??? 12 ??? v dd = 30v t r rise time ??? 78 ??? i d = 50a t d(off) turn-off delay time ??? 48 ??? r g = 3.6 ? t f fall time ??? 53 ??? v gs = 10v, see fig. 10 between lead, ??? ??? 6mm (0.25in.) from package and center of die contact c iss input capacitance ??? 3210 ??? v gs = 0v c oss output capacitance ??? 690 ??? v ds = 25v c rss reverse transfer capacitance ??? 140 ??? pf ? = 1.0mhz, see fig. 5 e as single pulse avalanche energy ??? 1180 320 mj i as = 50a, l = 260h nh electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain inductance l s internal source inductance ??? ??? s d g i gss ns
i dss drain-to-source leakage current repetitive rating; pulse width limited by max. junction temperature. (see fig. 11) starting t j = 25c, l = 260h r g = 25 ? , i as = 50a, v gs =10v (see figure 12) i sd 50a di/d 230a/s, v dd v (br)dss , t j 175c pulse width 400s; duty cycle 2%.

www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 10 100 1000 0.1 1 10 100 20s pulse width t = 175 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 10 100 1000 4 5 6 7 8 9 10 11 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 84a

4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 20 40 60 80 100 120 140 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 50a v = 12v ds v = 30v ds v = 48v ds 0.1 1 10 100 1000 0.0 0.6 1.2 1.8 2.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 1 10 100 v ds , drain-to-source voltage (v) 0 1000 2000 3000 4000 5000 6000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 1 10 100 1000 v ds , drain-tosource voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec

www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f
1 0.1 % + -

25 50 75 100 125 150 17 5 0 20 40 60 80 100 t , case temperature ( c) i , drain current (a) c d limited by package 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)

6 www.irf.com q g q gs q gd v g charge d.u.t. v d s i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + -

t p v (br)dss i as ! " #$ 25 50 75 100 125 150 175 0 200 400 600 800 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 20a 35a 50a r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs

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p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop r e-applied v oltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - ? ? !! ? "#$
% %## & %$# #$ ? &'( ? )* ? &'& + , % $-. % $* # --*"%/ &' %%% 0 -&,#& 1##$ for n-channel hexfet ? power mosfets

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dimensions are shown in millimeters (inches) note: "p" in as s embly line pos i ti on i ndi cates "l ead- f r ee" f530s t his is an irf530s with lot code 8024 as s emble d on ww 02, 2000 in the assembly line "l" assembly lot code int e r nat ional rectifier logo part numbe r dat e code ye ar 0 = 2000 we ek 02 line l f530s a = as s e mb l y s i t e code we e k 0 2 p = de s i gnat e s l e ad- f r e e product (opt ional) rectifier international logo lot code as s e mb l y ye ar 0 = 2000 dat e code part numbe r

www.irf.com 9 to-262 part marking information to-262 package outline dimensions are shown in millimeters (inches) assembly lot code rect if ier int er nat ional as s e mb le d on ww 19, 1997 note: "p " in as s embly line pos i ti on i ndi cates "l ead-f r ee" in the assembly line "c" logo t his is an irl 3103l lot code 1789 example: line c dat e code we e k 19 ye ar 7 = 1997 part number part number logo lot code assembly int e rnat ional rect ifier product (optional) p = d e s i gn at e s l e ad- f r e e a = as s e mb l y s i t e code week 19 ye ar 7 = 1997 dat e code or

10 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 06/04

dimensions are shown in millimeters (inches) 3 4 4 trr f eed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl f eed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957 ) 23.90 (.941 ) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362 ) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge.
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

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